ترانزیستور - مجتمع الکترونیک خوارزمی

NPN epitaxial planar silicon transistor
UHF Low-Noise Amplifier
Wide-Band Amplifier Applications

2SA562 ترانزیستور
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applica
Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
1 watt amplifier application.
Complementary to 2SC1959.

2SA562TM-0 ترانزیستور

Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications

Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
1 watt amplifier application.
Complementary to 2SC1959.

2SA733 ترانزیستور
PNP SILICON TRANSISTOR 2SA733
The 2SA733 is designed for use in diver stage of AF amplifier

2SA733(C)-T ترانزیستور

DESCRIPTION
The 2SA733 is designed for use in diver stage of AF amplifier.
FEATURES
• High hFE and Excellent Linearity: 200 TYP.
hFE (VCE = −6.0 V, IC = −1.0 mA)
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature −55 to +150°C
Junction Temperature +150°C Maximum
Maximum Power Dissipations (TA = 25°C)
Total Power Dissipation 250 mW
Maximum Voltages and Currents (TA = 25°C)
VCBO Collector to Base Voltage −60 V
VCEO Collector to Emitter Voltage −50 V
VEBO Emitter to Base Voltage −5.0 V
IC Collector Current −100 mA
IB Base Current −20 mA
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%

2SC1923 ترانزیستور
NPN Plastic Encapsulated Transistor
General purpose switching and amplification.
0.02A , 40V

2SC380 ترانزیستور

NPN Silicon Epitaxial Planar Transistor
High frequency amplifier application
for FM IF, OSC stage and AM CONV. IF stage
The transistor is subdivided into three groups R,
O, and Y, according to its DC current gain.

2SC458 ترانزیستور

Silicon NPN Epitaxial
Low frequency amplifier
Complementary pair with 2SA1029 and 2SA1030

2SC536 ترانزیستور

TO-92S Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
General Purpose Switching Application

2SK192A-GR ترانزیستور

FM Tuner Applications
VHF Band Amplifier Applications
High power gain: GPS = 24dB (typ.) (f = 100 MHz)
Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)

BC548-A ترانزیستور

NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100A for characteristics.

SS8550 ترانزیستور

PNP Epitaxial Silicon Transistor
Complementary to SS8050
Collector Current : IC= 1.5A
Collector Dissipation: PC = 2W (TC=25°C ) 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

8ch Darlington Sink Driver
The ULN2803APG / AFWG Series are high−voltage,
high−current darlington drivers comprised of eight NPN
darlington pairs.
Features
• Output current (single output) 500 mA (max)
• High sustaining voltage output 50 V (min)
• Output clamp diodes
• Package Type−AFWG : SOP−18pin